1.集成电路材料全国重点实验室，中国科学院上海微系统与信息技术研究所，上海，200050;2.中国科学院大学 材料与光电研究中心，北京，100049;3.上海理工大学，光电信息与计算机工程学院，上海，200093
国家自然科学基金（批准号：61927813， 62435020， 61991432）
JIANG Qing-Nan
State Key Laboratory of Materials for Integrated Circuits， Shanghai Institute of Microsystem and Information Technology， Chinese Academy of Sciences， 865 Changning Road， Shanghai 200050， China;Center of Materials Science and Optoelectronics Engineering， University of Chinese Academy of Sciences， Beijing 100049， ChinaTAN Zhi-Yong
State Key Laboratory of Materials for Integrated Circuits， Shanghai Institute of Microsystem and Information Technology， Chinese Academy of Sciences， 865 Changning Road， Shanghai 200050， China;Center of Materials Science and Optoelectronics Engineering， University of Chinese Academy of Sciences， Beijing 100049， ChinaWAN Wen-Jian
State Key Laboratory of Materials for Integrated Circuits， Shanghai Institute of Microsystem and Information Technology， Chinese Academy of Sciences， 865 Changning Road， Shanghai 200050， China;Center of Materials Science and Optoelectronics Engineering， University of Chinese Academy of Sciences， Beijing 100049， ChinaCAO Jun-Cheng
State Key Laboratory of Materials for Integrated Circuits， Shanghai Institute of Microsystem and Information Technology， Chinese Academy of Sciences， 865 Changning Road， Shanghai 200050， China;Center of Materials Science and Optoelectronics Engineering， University of Chinese Academy of Sciences， Beijing 100049， China1.State Key Laboratory of Materials for Integrated Circuits， Shanghai Institute of Microsystem and Information Technology， Chinese Academy of Sciences， 865 Changning Road， Shanghai 200050， China;2.Center of Materials Science and Optoelectronics Engineering， University of Chinese Academy of Sciences， Beijing 100049， China;3.School of Optical-Electrical and Computer Engineering， University of Shanghai for Science and Technology， Shanghai 200093， China
Supported by the National Natural Science Foundation of China （61927813， 62435020， 61991432）
