| ICP刻蚀对超晶格红外探测器电极制备的控制 |
| 投稿时间：2024-08-06 修订日期：2024-08-30 点此下载全文 |
| 引用本文：任昂,刘铭,李景峰.ICP刻蚀对超晶格红外探测器电极制备的控制[J].红外,2025,46(3):1~7 |
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| 中文摘要:II类超晶格红外探测器通常利用台面结实现对红外辐射的探测，其中金属电极的制备工艺至关重要。深入研究了电感耦合等离子体(Inductively Coupled Plasma, ICP)刻蚀系统中物理刻蚀与化学刻蚀对超晶格探测器电极孔形貌的控制以及对刻蚀速率的影响。通过调整ICP离子源功率、射频功率、刻蚀气体流量等参数，打破了刻蚀系统中物理刻蚀与化学刻蚀之间的平衡，实现了电极孔侧壁倾角从70°到90°的工艺控制。该方法可以获得平滑的电极孔侧壁以及合适的倾斜角度，为金属电极的生长提供最佳沉积条件。 |
| 中文关键词:红外探测器 ICP刻蚀 超晶格 电极孔 侧壁倾角 |
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| Control of ICP Etching on Electrodes Fabrication of Superlattice Infrared Detectors |
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| Abstract:Type-II superlattice infrared detectors usually use mesa junctions to detect infrared radiation, in which the preparation process of metal electrodes is crucial. The control of physical etching and chemical etching on the morphology of superlattice detector electrode holes and the influence on the etching rate in the inductively coupled plasma (ICP) etching system are studied in depth. By adjusting parameters such as ICP ion source power, radio frequency power, and etching gas flow, the balance between physical etching and chemical etching in the etching system is broken, and the process control of the inclination angle of the electrode hole sidewall from 70° to 90° is achieved. This method can obtain smooth electrode hole sidewalls and suitable inclination angles, providing optimal deposition conditions for the growth of metal electrodes. |
| keywords:infrared detector inductively coupled plasma etching superlattice electrode hole sidewall inclination angle |
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