| 分子束外延6英寸硅基碲镉汞材料表面缺陷研究 |
| 投稿时间：2024-11-01 修订日期：2024-11-21 点此下载全文 |
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| 中文摘要:随着大规模碲镉汞红外焦平面探测器对大尺寸硅基碲镉汞材料的需求日益增长，本文针对分子束外延（Molecular Beam Epitaxy,MBE）6英寸短波硅基碲镉汞材料表面宏观缺陷密度进行研究。使用扫描电子显微镜（Scanning Electron Microscopy,SEM）对材料表面缺陷进行分析，确定缺陷种类及产生原因。通过对外延温区均匀性、束流均匀性和源炉稳定性的改进优化，提高了材料组分均匀性，并通过材料表面缺陷控制及材料工艺参数的优化，突破了分子束外延6英寸短波硅基碲镉汞材料制备技术，批量产出高均匀性和低表面缺陷密度的高质量6英寸短波硅基碲镉汞材料。材料中心处与边缘处组分差距≤3.0 %，表面宏观缺陷密度≤70个/cm2（＞2μm）。 |
| 中文关键词:分子束外延 6英寸 表面缺陷 |
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| Study on surface defects of molecular beam epitaxial 6-inch silicon-based mercury cadmium tellurium |
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| Abstract:With the increasing demand for large-scale silicon-based HgCdTe materials for large-scale HgCdTe infrared focal plane detectors, the macroscopic defect density on the surface of 6-inch short-wave silicon-based HgCdTe materials is studied in this paper. Scanning electron microscopy (SEM) was used to analyze the surface defects of materials to determine the types and causes of defects. Through the improvement and optimization of the uniformity of the external temperature zone, the beam uniformity and the stability of the source furnace were improved, and through the control of material surface defects and the optimization of material process parameters, the preparation technology of molecular beam epitaxial 6-inch short-wave silicon-based mercury cadmium tellurium materials was broken through, and high-quality 6-inch short-wave silicon-based mercury cadmium tellurium materials with high uniformity and low surface defect density were produced in batches. The component gap between the center and the edge of the material is ≤ 3.0 %, and the surface macroscopic defect density ≤ 70 pcs/cm2 (>2 μm). |
| keywords:Molecular Beam Epitaxy 6 inch Surface Defects |
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