| 硅基红外芯片抛光后颗粒清洗机理研究 |
| 投稿时间：2024-10-21 修订日期：2024-11-04 点此下载全文 |
| 引用本文： |
| 摘要点击次数: 32 |
| 全文下载次数: 0 |
|
|
| 中文摘要:硅基红外器件的背面抛光质量直接影响芯片性能参数，抛光后的清洗影响后续工艺的可靠性。材料表面吸附颗粒的清洗是当前研究的热点。本文探讨了使用阴离子表面活性剂十二烷基硫酸钠清洗硅溶胶抛光后硅片颗粒的效果，并采用分子模拟方法深入分析了清洗机理。结果表明，十二烷基硫酸钠浓度较高时，可在SiO2颗粒表面形成双层吸附形态并在最外围呈现负电荷状态，这与酸性环境中硅片表面所带的负电荷形成静电排斥力，进而起到有效清洗SiO2颗粒的效果。 |
| 中文关键词:Si基红外器件，硅片清洗，表面活性剂，分子模拟 |
| |
| Study on particle cleaning mechanism of silicon-based infrared chip after polishing |
|
|
| Abstract:The quality of back polishing of silicon-based infrared devices directly affects the performance parameters of the chips, and the cleaning after polishing affects the reliability of subsequent processes. The cleaning of adsorbed particles on the material surface is currently a hot topic of research. This paper discusses the particle cleaning effect of silicon wafers polished with silica sol using the anionic surfactant sodium dodecyl sulfate (SDS), and uses molecular simulation methods to deeply analyze the mechanism. The results show that when the concentration of SDS is high, it can form a bilayer adsorption morphology on the surface of SiO2 particles and present a negatively charged state on the outermost layer. This forms an electrostatic repulsion with the negative charge on the silicon wafer surface in an acidic environment, thereby effectively cleaning the SiO2 particle. |
| keywords:Keywords: Si-based infrared devices, Si cleaning, Surfactant, Molecular simulation. |
| HTML 查看/发表评论 下载PDF阅读器 |