| 磁控溅射碲镉汞表面钝化模拟研究 |
| 投稿时间：2024-09-23 修订日期：2024-10-09 点此下载全文 |
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| 中文摘要:碲镉汞（HgCdTe）表面钝化层的化学计量比对器件性能存在至关重要的影响，本文通过SRIM软件模拟了Ar+ 溅射能量和入射角度对表面钝化层化学计量比的影响。模拟结果表明，在300~500eV能量范围内，CdTe和ZnS对Ar+的核阻止本领远大于电子阻止本领，且ZnS的核阻止本领优于CdTe；离子入射角为60°附近时CdTe有最大溅射产额，入射角为70°附近时ZnS有最大溅射产额；溅射过程中存在择优溅射现象，Cd、Zn元素为择优溅射元素。基于模拟结果，长波碲镉汞表面钝化层质量得到明显改善。该方法建立了钝化层计量比与溅射能量和入射角度之间的关系，为实际工艺过程提供指导方向，对于高性能碲镉汞红外探测器研制具有一定实际意义。 |
| 中文关键词:磁控溅射 阻止本领 溅射产额 择优溅射 |
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| Simulation Study of Magnetron Sputtering for HgCdTe Surface Passivation |
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| Abstract:The stoichiometric ratio of the surface passivation layer of HgCdTe has a crucial influence on the device performance. In this paper, the effects of Ar+ sputtering energy and incidence angle on the stoichiometric ratio of the surface passivation layer are simulated by SRIM software. The simulation results show that, in the energy range of 300-500 eV, the nuclear stopping power of CdTe and ZnS on Ar+ is much larger than the electronic stopping power, and the nuclear stopping power of ZnS is better than that of CdTe; the maximum sputtering yield of CdTe is found near the ion incidence angle of 60°, and the maximum sputtering yield of ZnS is found near the incidence angle of 70°; there is a selective sputtering phenomenon in the sputtering process, and the Cd, Zn is the preferred sputtering element. Based on the simulation results, the quality of the passivation layer on the long-wave HgCdTe surface has been significantly improved. This method establishes the relationship between the stoichiometric ratio of the passivation layer and the sputtering energy as well as the angle of incidence, which provides guidance for the actual process, and is of practical significance for the development of high-performance HgCdTe infrared detectors. |
| keywords:magnetron sputtering stopping collar sputtering yield selective sputtering |
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